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Seminars Archive

Narrow photoluminescence and Raman peaks of epitaxial MoS2 on graphene/Ir(111)

Niels Ehlen (II. Physikalisches Institut, Universität zu Köln, Köln, Germany)
Thu 17 Jan, at 14:15 - Seminar Room T2

Abstract
We report the observation of photoluminescence (PL) with a narrow 18 meV peak width from MoS2 grown via molecular beam epitaxy on a graphene/Ir(111) substrate. The absence of PL quenching by the metallic substrate is explained by a weak graphene-MoS2 interaction. We use angle-resolved photoemission spectroscopy (ARPES) and temperature-dependent Raman spectroscopy to highlight the weak substrate interaction of the MoS2 layer, finding no hybridization of the electronic states of MoS2 and graphene as well as a different thermal expansion of both layers. MoS2 grown via molecular beam epitaxy on graphene is thus an important system for optoelectronic applications which allows for a macroscopically homogeneous large area growth with controlled properties.

(Referer: L. Petaccia)
Last Updated on Tuesday, 24 April 2012 15:21